12. Contact resistance measurement of Ge2Sb2Te5 phase change material to TiN electrode by spacer etched nanowire

R. Huang, K. Sun, K. S. Kiang, R. Chen, Y. Wang, B. Gholipour, D. W. Hewak, C. H. de Groot.

12. Contact resistance measurement of Ge2Sb2Te5 phase change material to TiN electrode by spacer etched nanowire